E3S-GS3E4 E3S – GS3E4 E3S GS3E4 2M Photoelectric Sensor PT35

E3S-GS3E4 E3S – GS3E4 E3S GS3E4 Photoelectric Sensor PT35

Feature:
Sensing distance 30 mm
Standard sensing object Opaque, 6-mm dia. min.
Minimum detectable object 3-mm dia. min. (black mark on transparent sheet)
Light source (wavelength) Infrared LED (950 nm)
Power supply voltage 12 to 24 VDC ±10%, ripple (p-p): 10% max.
Current consumption 40 mA max.
Control output Load power supply voltage: 24 VDC max., Load current: 80 mA max. (residual voltage:
2 V max.); NPN voltage output; Light-ON/Dark-ON mode selector
Protection circuits Power supply reverse polarity, Output short-circuit protection
Response time Operate or reset: 1 ms max.
Sensitivity adjustment One-turn adjuster
Ambient illumination
(Receiver side) Incandescent lamp: 3,000 lx max.
Sunlight: 10,000 lx max.
Ambient temperature Operating: – 25 to 55 °C (with no icing or condensation)
Storage: – 40 to 70 °C (with no icing or condensation)
Ambient humidity Operating: 35% to 85% (with no condensation)
Storage: 35% to 95% (with no condensation)
Insulation resistance 20 MΩ min. (at 500 VDC)
Dielectric strength 1,000 VAC at 50/60 Hz for 1 min
Vibration resistance
(destruction) 10 to 55 Hz with a 1.5-mm double amplitude for 2 h each in X, Y and Z directions
Shock resistance
(destruction) 500 m/s2, for 3 times each in X, Y and Z directions